High-power and small-volume filter based on IPD technology | Hongye Product

With the rapid development of communication fields such as 5G, satellite communication, and radar, the performance requirements of equipment for RF filters are getting higher and higher, especially the demand for high power, small size and wide bandwidth is becoming increasingly prominent.
Based on advanced IPD integration technology, Hongye Technology has successfully developed a high-power, small-volume, domestically produced filter product solution, which effectively solves the challenges faced by the current communication system.

Customizable wideband: covering L, S, C, X, Ku bands;
High power handling capability: high voltage and high Q capacitors and inductors, special high thermal conductivity and heat dissipation materials, typical power (output 50W continuous wave);
Ultra-small volume design: typical size 8*2.8*1.3mm;
Superior RF performance: better than MEMS and GaAs devices, close to dielectrics;
Cost-effectiveness: higher cost advantage in mass production;
Recommended applications: more suitable for TR component harmonic filtering scenarios;

| Category |
MEMS |
Gallium Arsenide |
IPD |
Cavity/Dielectric |
| Size |
Small |
Small |
Small |
Large |
| Power |
Small |
Small |
Large |
Large |
| RF index |
General |
General |
High |
Higher |

Same test conditions: 75 degrees Celsius bottom temperature, 80W output power.

Ordinary structure filters generate serious heat, with the highest temperature reaching 297℃

The maximum heating temperature of the IPD structure filter is 103℃


8.5G-9.5G low-pass test
| Insertion loss |
2-3 harmonic suppression |
Input power |
Dimensions (mm) |
| Typical <0.6dB |
>60dB |
47dBm |
8*2.8*1.3 |
The company integrates passive components based on IPD technology, uses high-quality materials and advanced processes, and achieves high-density, high-performance product design, significantly improving the performance and reliability of RF filters. In the future, the company will continue to be committed to technological innovation, provide more high-quality domestically produced cutting-edge RF products, and jointly promote the development of wireless communication technology.

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